MT48LC16M16A2BG-7E:D Micron Technology Inc, MT48LC16M16A2BG-7E:D Datasheet - Page 59

DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin VFBGA Tray

MT48LC16M16A2BG-7E:D

Manufacturer Part Number
MT48LC16M16A2BG-7E:D
Description
DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin VFBGA Tray
Manufacturer
Micron Technology Inc
Type
SDRAMr

Specifications of MT48LC16M16A2BG-7E:D

Package
54VFBGA
Density
256 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
3.3 V
Maximum Clock Rate
143 MHz
Maximum Random Access Time
5.4 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (16Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Package / Case
54-VFBGA
Organization
16Mx16
Address Bus
15b
Access Time (max)
5.4ns
Operating Supply Voltage (typ)
3.3V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
135mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48LC16M16A2BG-7E:D
Manufacturer:
MICRON
Quantity:
6 000
Part Number:
MT48LC16M16A2BG-7E:D
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48LC16M16A2BG-7E:D TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 28: READ Continuous Page Burst
Command
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Row
Row
Bank
T0
t CKH
t CMH
t AH
t AH
t AH
t RCD
t CL
T1
Note:
NOP
t CH
t CMS
1. For this example, CL = 2.
t CK
Column m
Bank
T2
READ
t CMH
CAS latency
T3
NOP
t LZ
t AC
T4
NOP
D
OUT
t OH
t AC
59
All locations within same row
T5
Full-page burst does not self-terminate.
D
NOP
Can use BURST TERMINATE command.
OUT
t OH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t AC
Full page completed
T6
NOP
D
OUT
t OH
t AC
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(
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(
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)
)
(
(
(
(
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(
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(
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256Mb: x4, x8, x16 SDRAM
)
)
)
Tn + 1
NOP
D
OUT
t OH
t AC
© 1999 Micron Technology, Inc. All rights reserved.
BURST TERM
Tn + 2
READ Operation
D
OUT
t OH
t AC
Tn + 3
NOP
D
OUT
t OH
t HZ
Don’t Care
Undefined
Tn + 4
NOP

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