MT48LC16M16A2FG-75:D Micron Technology Inc, MT48LC16M16A2FG-75:D Datasheet - Page 70
![DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin VFBGA Tray](/photos/31/34/313423/557-54-vfbga_sml.jpg)
MT48LC16M16A2FG-75:D
Manufacturer Part Number
MT48LC16M16A2FG-75:D
Description
DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin VFBGA Tray
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet
1.MT48LC16M16A2FG-75D.pdf
(87 pages)
Specifications of MT48LC16M16A2FG-75:D
Density
256 Mb
Maximum Clock Rate
133 MHz
Package
54VFBGA
Address Bus Width
15 Bit
Operating Supply Voltage
3.3 V
Maximum Random Access Time
6|5.4 ns
Operating Temperature
0 to 70 °C
Organization
16Mx16
Address Bus
15b
Access Time (max)
6/5.4ns
Operating Supply Voltage (typ)
3.3V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
135mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT48LC16M16A2FG-75:D TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 40: READ With Auto Precharge Interrupted by a WRITE
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Internal
States
Command
Note:
Address
Bank m
Bank n
DQM
CLK
DQ
1
1. DQM is HIGH at T2 to prevent D
active
Page
READ - AP
Bank n,
Bank n
T0
Col a
READ with burst of 4
Page active
NOP
CL = 3 (bank n)
T1
T2
NOP
70
T3
D
NOP
OUT
OUT
a + 1 from contending with D
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE - AP
Bank m,
Col d
T4
Bank m
D
Interrupt burst, precharge
IN
WRITE with burst of 4
Transitioning data
T5
NOP
256Mb: x4, x8, x16 SDRAM
D
t
RP - bank n
IN
PRECHARGE Operation
T6
NOP
D
IN
© 1999 Micron Technology, Inc. All rights reserved.
IN
d at T4.
T7
NOP
D
t WR - bank m
Don’t Care
IN
Write-back
Idle