MT29F2G16ABBEAH4-IT:E Micron Technology Inc, MT29F2G16ABBEAH4-IT:E Datasheet - Page 36
MT29F2G16ABBEAH4-IT:E
Manufacturer Part Number
MT29F2G16ABBEAH4-IT:E
Description
128MX16 NAND FLASH PLASTIC IND TEMP PBF VFBGA 1.8V ASYNCH/PA
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F2G16ABBEAH4-ITE.pdf
(125 pages)
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READ PARAMETER PAGE (ECh)
Figure 26: READ PARAMETER (ECh) Operation
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
Cycle type
I/O[7:0]
R/B#
Command
ECh
The READ PARAMETER PAGE (ECh) command is used to read the ONFI parameter
page programmed into the target. This command is accepted by the target only when
all die (LUNs) on the target are idle.
Writing ECh to the command register puts the target in read parameter page mode. The
target stays in this mode until another valid command is issued.
When the ECh command is followed by an 00h address cycle, the target goes busy for
t
the READ MODE (00h) command must be used to re-enable data output mode. Use of
the READ STATUS ENHANCED (78h) command is prohibited while the target is busy
and during data output.
A minimum of three copies of the parameter page are stored in the device. Each param-
eter page is 256 bytes. If desired, the RANDOM DATA READ (05h-E0h) command can be
used to change the location of data output.
R. If the READ STATUS (70h) command is used to monitor for command completion,
Address
00h
t WB
t R
t RR
36
D
P0
OUT
0
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
P1
2Gb: x8, x16 NAND Flash Memory
OUT
0
READ PARAMETER PAGE (ECh)
D
…
OUT
D
P0
OUT
1
© 2009 Micron Technology, Inc. All rights reserved.
D
P1
OUT
1
D
…
OUT