MT29F2G16ABBEAH4-IT:E Micron Technology Inc, MT29F2G16ABBEAH4-IT:E Datasheet - Page 98
MT29F2G16ABBEAH4-IT:E
Manufacturer Part Number
MT29F2G16ABBEAH4-IT:E
Description
128MX16 NAND FLASH PLASTIC IND TEMP PBF VFBGA 1.8V ASYNCH/PA
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F2G16ABBEAH4-ITE.pdf
(125 pages)
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Figure 76: TWO-PLANE BLOCK ERASE
Figure 77: TWO-PLANE/MULTIPLE-DIE READ STATUS Cycle
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
WE#
R/B#
I/Ox
CE#
ALE
RE#
CLE
WE#
I/Ox
CE#
ALE
RE#
CLE
60h
Address input (3 cycles)
1st plane
78h
D1h
Optional
t DBSY
Address (3 cycles)
60h
98
Address input (3 cycles)
2nd plane
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
t WHR
D0h
t AR
Two-Plane Operations
t BERS
t REA
© 2009 Micron Technology, Inc. All rights reserved.
Status output
or 78h
70h
Status
Don‘t Care
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