PUMB16,115 NXP Semiconductors, PUMB16,115 Datasheet - Page 7

• Manufacturer Part Number: PUMB16,115
• Description: TRANS PNP/PNP 50V 100MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of PUMB16,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: PNP
• Typical Input Resistor: 22 KOhms
• Typical Resistor Ratio: 0.476
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057885115; PUMB16 T/R; PUMB16 T/R

NXP Semiconductors
10. Revision history
Table 10.
PEMB16_PUMB16_3
Product data sheet
Document ID
PEMB16_PUMB16_3
Modifications:
PEMB16_PUMB16_2
PUMB16_1
Revision history
Release date
20090831
20050610
20031103
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 5 “Package outline SOT363
PNP/PNP resistor-equipped transistors; R1 = 22 k , R2 = 47 k
Data sheet status
Product data sheet
Product data sheet
Product specification
Rev. 03 — 31 August 2009
(SC-88)”: updated
Change notice
-
-
-
PEMB16; PUMB16
Supersedes
PEMB16_PUMB16_2
PUMB16_1
-
© NXP B.V. 2009. All rights reserved.
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