PUML1,115 NXP Semiconductors, PUML1,115 Datasheet - Page 7

• Manufacturer Part Number: PUML1,115
• Description: TRANS ARRAY NPN W/RES SC-88
• Manufacturer: NXP Semiconductors

Specifications of PUML1,115

• Transistor Type: 1 NPN Pre-Biased, 1 NPN
• Current - Collector (ic) (max): 100mA, 200mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V / 210 @ 2mA, 10V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 1µA
• Frequency - Transition: 230MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062098115

NXP Semiconductors
PUML1_DG_1
Product data sheet
Fig 7.
Fig 9.
V
h
(V)
I(on)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
10
FE
10
10
10
10
1
1
3
2
10
1
10
V
TR2: DC current gain as a function of collector
current; typical values
V
TR2: On-state input voltage as a function of
collector current; typical values
CE
amb
amb
amb
CE
amb
amb
amb
1
1
= 5 V
= 0.3 V
= 150 C
= 25 C
= 40 C
= 40 C
= 25 C
= 100 C
1
1
(1)
(2)
(3)
10
10
(1)
(2)
(3)
I
I
C
C
006aaa034
(mA)
006aaa036
(mA)
50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET
10
10
Rev. 01 — 14 July 2008
2
2
Fig 8.
Fig 10. TR2: Off-state input voltage as a function of
V
V
CEsat
(V)
(V)
I(off)
10
10
(1) T
(2) T
(3) T
10
(1) T
(2) T
(3) T
10
1
1
1
2
1
10
1
I
TR2: Collector-emitter saturation voltage as a
function of collector current; typical values
V
collector current; typical values
C
amb
amb
amb
amb
amb
amb
2
CE
/I
B
= 5 V
= 20
= 100 C
= 25 C
= 40 C
= 40 C
= 25 C
= 100 C
(1)
(2)
(3)
10
1
10
(1)
(2)
(3)
PUML1/DG
1
I
C
(mA)
I
© NXP B.V. 2008. All rights reserved.
C
(mA)
006aaa035
006aaa037
10
10
2
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