PUML1 NXP Semiconductors, PUML1 Datasheet
PUML1
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PUML1 Summary of contents
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... PUML1/ 200 mA NPN general-purpose transistor/ 100 mA NPN resistor-equipped transistor Rev. 01 — 14 July 2008 1. Product profile 1.1 General description NPN general-purpose transistor and NPN Resistor-Equipped Transistor (RET) in one SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. 1.2 Features I General-purpose transistor: N 200 mA collector current I ...
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... Description SC-88 plastic surface-mounted package; 6 leads Marking codes Limiting values Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current Rev. 01 — 14 July 2008 PUML1/DG Simplified outline Graphic symbol [1] Marking code PA* Conditions Min ...
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... P tot (mW) 200 100 FR4 PCB, standard footprint Per transistor: Power derating curve Rev. 01 — 14 July 2008 PUML1/DG Conditions Min [ amb open emitter - open base - open collector - - - - single pulse ...
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... Product data sheet 50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to ambient Rev. 01 — 14 July 2008 PUML1/DG Conditions Min Typ [1] in free air - - [1] in free air - - © ...
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... mA saturation voltage off-state input voltage on-state input voltage bias resistor 1 (input) bias resistor ratio collector capacitance MHz Rev. 01 — 14 July 2008 PUML1/DG Min Typ = 100 210 ...
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... V CEsat ( (mA (1) T (2) T (3) T Fig 6. TR1: Collector-emitter saturation voltage as a function of collector current; typical values Rev. 01 — 14 July 2008 PUML1/DG 006aaa993 I (mA) = 0.56 B 0.50 0.44 0.38 0.32 0.26 0.20 0.14 0.08 0. amb 006aab258 (1) (2) (3) 1 ...
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... C (1) T (2) T (3) T Fig 8. 006aaa036 10 V I(off) ( (mA) C (1) T (2) T (3) T Fig 10. TR2: Off-state input voltage as a function of Rev. 01 — 14 July 2008 PUML1/DG 1 (1) ( (mA 100 C amb = 25 C amb = 40 C amb TR2: Collector-emitter saturation voltage as a function of collector current ...
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... Product data sheet 50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET 2.2 1.8 6 2.2 1.35 2.0 1.15 pin 1 index 1 0.65 1.3 Dimensions in mm Packing methods SOT363 4 mm pitch tape and reel pitch tape and reel; T2 Rev. 01 — 14 July 2008 PUML1/DG 1.1 0 0.25 0.3 0.10 0.2 06-03-16 [1] Packing quantity 3000 [2] -115 [3] -125 Section 14 ...
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... Product data sheet 50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET 2.65 1.5 2.35 0 1.8 1.3 1.3 2.45 5.3 Rev. 01 — 14 July 2008 PUML1/ Dimensions in mm 1.5 0.3 2.5 1.5 Dimensions in mm direction during soldering solder lands solder resist solder paste occupied area sot363_fr solder lands solder resist occupied area preferred transport sot363_fw © ...
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... Revision history Table 9. Revision history Document ID Release date PUML1_DG_1 20080714 PUML1_DG_1 Product data sheet 50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET Data sheet status Change notice Product data sheet - Rev. 01 — 14 July 2008 PUML1/DG Supersedes - © NXP B.V. 2008. All rights reserved ...
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... Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 14 July 2008 PUML1/DG © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PUML1/DG All rights reserved. Date of release: 14 July 2008 Document identifier: PUML1_DG_1 ...