PMST4403,115 NXP Semiconductors, PMST4403,115 Datasheet - Page 3

• Manufacturer Part Number: PMST4403,115
• Description: TRANS PNP 40V 600MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of PMST4403,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 200mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-5036-2; 934026890115; PMST4403 T/R; PMST4403 T/R; PMST4403,115

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1.
1999 Apr 22
R
I
I
h
V
V
C
C
f
Switching times (between 10% and 90% levels); (see Fig.3)
t
t
t
t
t
t
amb
CBO
EBO
T
on
d
r
off
s
f
SYMBOL
SYMBOL
FE
CEsat
BEsat
PNP switching transistor
th j-a
c
e
Pulse test: t
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
turn-on time
delay time
rise time
turn-off time
storage time
fall time
p
≤ 300 µs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
V
I
I
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
C
C
C
E
C
C
Con
Boff
CE
I
I
I
= 0; V
= 0; V
= 0; V
= i
= −150 mA; V
= −500 mA; V
= −150 mA; I
= −500 mA; I
= −150 mA: I
= −500 mA; I
= i
= −20 mA; V
C
C
C
= 15 mA
= −150 mA; I
= −1 V; (see Fig.2)
= −0.1 mA
= −1 mA
= −10 mA
e
c
= 0; V
= 0; V
EB
CB
CB
3
= −5 V
= −40 V
= −40 V; T
CB
EB
CONDITIONS
CE
B
B
B
B
= −10 V; f = 1 MHz
= −500 mV; f = 1 MHz
CE
CE
= −15 mA; note 1
= −50 mA; note 1
= −15 mA; note 1
= −50 mA; note 1
Bon
note 1
= −10 V; f = 100 MHz 200
= −2 V; note 1
= −2 V; note 1
= −15 mA;
CONDITIONS
j
= 150 °C
−
−
−
−
30
60
100
100
20
−
−
+750
−
−
−
−
−
−
−
−
−
MIN.
VALUE
625
PMST4403
Product data sheet
−50
−10
−50
−
−
−
−
300
−
−400
−750
−950
−1.3
8.5
35
−
40
15
30
350
300
50
MAX.
UNIT
K/W
nA
µA
nA
mV
mV
mV
V
pF
pF
MHz
ns
ns
ns
ns
ns
ns
UNIT