PBSS5320T,215 NXP Semiconductors, PBSS5320T,215 Datasheet
PBSS5320T,215
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PBSS5320T T/R
PBSS5320T T/R
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PBSS5320T,215 Summary of contents
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DATA SHEET PBSS5320T PNP low V Product data sheet Supersedes data of 2002 Aug 08 DISCRETE SEMICONDUCTORS (BISS) transistor CEsat 2004 Jan 15 ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat FEATURES • Low collector-emitter saturation voltage V corresponding low R CEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat generation. APPLICATIONS • Power management applications • Low and medium power DC/DC convertors • ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC repetitive peak collector current CRP I peak collector current CM I base current (DC) ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current V CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage R equivalent on-resistance CEsat V base-emitter saturation BEsat voltage V base-emitter turn-on voltage ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat 1000 handbook, halfpage h FE 800 600 400 200 0 −1 −10 −1 −10 −10 = − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values. ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat −10 3 handbook, halfpage V CEsat (mV) −10 2 −10 −1 −1 −10 −1 −10 − 10 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.6 Collector-emitter saturation voltage as a function of collector current; typical values. −10 ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat 2 10 handbook, halfpage R CEsat (Ω −1 10 −2 10 −1 −10 −1 −10 − 20 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.10 Equivalent on-resistance as a function of collector current; typical values. 2004 Jan 15 ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2 ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...