PBSS5120T,215 NXP Semiconductors, PBSS5120T,215 Datasheet

TRANS PNP 20V 1A SOT23

PBSS5120T,215

Manufacturer Part Number
PBSS5120T,215
Description
TRANS PNP 20V 1A SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS5120T215.pdf (7 pages)

Specifications of PBSS5120T,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
250mV @ 50mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 500mA, 2V
Power - Max
480mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
300
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 20 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 1 A
Maximum Dc Collector Current
- 2 A
Power Dissipation
300 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4345-2
934057987215
PBSS5120T T/R
PBSS5120T T/R
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D088
PBSS5120T
20 V, 1 A
PNP low V
(BISS) transistor
CEsat
Product data sheet
2003 Sep 29

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PBSS5120T,215 Summary of contents

Page 1

DATA SHEET PBSS5120T PNP low V Product data sheet DISCRETE SEMICONDUCTORS M3D088 (BISS) transistor CEsat 2003 Sep 29 ...

Page 2

... NXP Semiconductors PNP low V (BISS) transistor CEsat FEATURES • Low collector-emitter saturation voltage V • High collector current capability I • High efficiency leading to less heat generation • Reduced printed-circuit board requirements • Cost effective alternative for MOSFETs in specific applications. APPLICATIONS • Power management – ...

Page 3

... NXP Semiconductors PNP low V (BISS) transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation ...

Page 4

... NXP Semiconductors PNP low V (BISS) transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage R equivalent on-resistance CEsat V base-emitter turn-on voltage BEon f transition frequency T C collector capacitance ...

Page 5

... NXP Semiconductors PNP low V (BISS) transistor CEsat PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2003 Sep scale 3.0 1.4 2.5 1.9 0.95 2.8 1 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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