PBSS4320T,215 NXP Semiconductors, PBSS4320T,215 Datasheet

TRANS NPN 20V 2A SOT23

PBSS4320T,215

Manufacturer Part Number
PBSS4320T,215
Description
TRANS NPN 20V 2A SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4320T,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
310mV @ 300mA, 3A
Dc Current Gain (hfe) (min) @ Ic, Vce
220 @ 1A, 2V
Power - Max
540mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
220
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
2 A
Maximum Dc Collector Current
5 A
Power Dissipation
300 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4157-2
934056854215
PBSS4320T T/R
PBSS4320T T/R
Product data sheet
Supersedes data of 2002 Aug 08
DATA SHEET
PBSS4320T
20 V NPN low V
DISCRETE SEMICONDUCTORS
CEsat
transistor
2004 Mar 18

Related parts for PBSS4320T,215

PBSS4320T,215 Summary of contents

Page 1

DATA SHEET PBSS4320T 20 V NPN low V Product data sheet Supersedes data of 2002 Aug 08 DISCRETE SEMICONDUCTORS CEsat transistor 2004 Mar 18 ...

Page 2

... NXP Semiconductors 20 V NPN low V CEsat FEATURES • Low collector-emitter saturation voltage V corresponding low R CEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat generation. APPLICATIONS • Power management applications • Low and medium power DC/DC convertors • ...

Page 3

... NXP Semiconductors 20 V NPN low V CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC repetitive peak collector current CRP I peak collector current CM I base current (DC) ...

Page 4

... NXP Semiconductors 20 V NPN low V CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current I CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage R equivalent on-resistance CEsat V base-emitter saturation BEsat voltage V base-emitter turn-on voltage BEon ...

Page 5

... NXP Semiconductors 20 V NPN low V CEsat 800 handbook, halfpage h FE 600 400 200 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values. 1400 handbook, halfpage V BEsat (mV) 1000 600 200 1 10 ...

Page 6

... NXP Semiconductors 20 V NPN low V CEsat 3 10 handbook, halfpage V CEsat (mV 10 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.6 Collector-emitter saturation voltage as a function of collector current; typical values handbook, halfpage V CEsat (mV ( 150 °C. (1) T amb = 25 ° ...

Page 7

... NXP Semiconductors 20 V NPN low V CEsat 2 10 handbook, halfpage R CEsat ( ) 20 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.10 Equivalent on-resistance as a function of collector current; typical values. 2004 Mar 18 transistor MLD857 (1) (2) ( Product data sheet PBSS4320T ...

Page 8

... NXP Semiconductors 20 V NPN low V CEsat PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Mar 18 transistor scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2 ...

Page 9

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 10

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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