PBSS5350X,115 NXP Semiconductors, PBSS5350X,115 Datasheet - Page 6

TRANS PNP 50V 3A SOT89

PBSS5350X,115

Manufacturer Part Number
PBSS5350X,115
Description
TRANS PNP 50V 3A SOT89
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS5350X,115

Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Type
PNP
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
390mV @ 300mA, 3A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 1A, 2V
Power - Max
1.6W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
3 A
Power Dissipation
1600 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4170-2
934055948115
PBSS5350X T/R
PBSS5350X T/R
NXP Semiconductors
2004 Nov 04
50 V, 3 A
PNP low V
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
−1
−1
1
1
3
2
10
3
2
10
−5
−5
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
duty cycle =
1.00
0
duty cycle =
1.00
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
0
CEsat
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
10
10
−4
−4
(BISS) transistor
10
10
−3
−3
10
10
−2
−2
2
2
.
.
10
10
6
−1
−1
1
1
10
10
10
10
2
2
PBSS5350X
Product data sheet
t
t
p
p
006aaa244
006aaa245
(s)
(s)
10
10
3
3

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