PBSS5540Z,115 NXP Semiconductors, PBSS5540Z,115 Datasheet - Page 4

• Manufacturer Part Number: PBSS5540Z,115
• Description: TRANS PNP 40V 5A SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBSS5540Z,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 160mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 2A, 2V
• Power - Max: 2W
• Frequency - Transition: 120MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 2000 mW
• Maximum Operating Frequency: 120 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 40V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 5A
• Dc Current Gain (min): 250
• Frequency (max): 120MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4172-2; 934055496115; PBSS5540Z T/R; PBSS5540Z T/R

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2001 Sep 21
I
I
h
V
R
V
V
V
f
C
SYMBOL
amb
CBO
EBO
T
FE
CEsat
CEsat
BEsat
BEon
40 V low V
CEsat
c
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
equivalent on-resistance
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
CEsat
PARAMETER
PNP transistor
V
V
V
V
V
V
V
I
I
I
I
I
I
V
I
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CE
CB
= −500 mA; I
= −1 A; I
= −2 A; I
= −2 A; I
= −5 A; I
= −5 A; I
= −100 mA; V
= −5 V; I
= −30 V; I
= −30 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −10 V; I
4
CONDITIONS
B
B
B
B
B
= −10 mA
= −200 mA
= −200 mA; note 1
= −500 mA
= −500 mA
C
C
C
C
C
C
E
E
E
= 0
= −500 mA
= −1 A; note 1
= −2 A; note 1
= −5 A; note 1
= −2 A
B
= 0
= 0; T
= I
CE
= −5 mA
e
= −10 V;
= 0;
j
= 150 °C −
−
−
250
200
150
50
−
−
−
−
−
−
−
60
−
MIN.
−
−
−
350
300
250
150
−80
−120
−110
<55
−250
−
−0.8
120
90
TYP.
PBSS5540Z
Product data sheet
−100
−50
−100
−
−
−
−
−120
−170
−160
<80
−375
−1.3
−1.25
−
105
MAX.
nA
μA
nA
mV
mV
mV
mΩ
mV
V
V
MHz
pF
UNIT