MJE172 STMicroelectronics, MJE172 Datasheet

TRANSISTOR PNP 80V 3A SOT-32

MJE172

Manufacturer Part Number
MJE172
Description
TRANSISTOR PNP 80V 3A SOT-32
Manufacturer
STMicroelectronics
Type
Amplifier, Powerr
Datasheets

Specifications of MJE172

Transistor Type
PNP
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1.7V @ 600mA, 3A
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 100mA, 1V
Power - Max
12.5W
Frequency - Transition
50MHz
Mounting Type
Through Hole
Package / Case
TO-126-3
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
3 A
Power Dissipation
12.5 W
Continuous Collector Current
3 A
Dc Collector/base Gain Hfe Min
50
Maximum Operating Frequency
50 MHz
Current, Collector
-3 A
Current, Gain
250
Frequency
50 MHz
Package Type
SOT-32
Polarity
PNP
Primary Type
Si
Resistance, Thermal, Junction To Case
10 °C/W
Voltage, Breakdown, Collector To Emitter
-80 V
Voltage, Collector To Base
-100 V
Voltage, Collector To Emitter
-80 V
Voltage, Collector To Emitter, Saturation
-1.7 V
Voltage, Emitter To Base
-7 V
Dc
0027
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2553-5

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Part Number
Manufacturer
Quantity
Price
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DESCRIPTION
The MJE172 (PNP type) and MJE182 (NPN type)
are silicon Epitaxial Planar, complementary
transistors in Jedec SOT-32 plastic package.
They are designed for low power audio amplifier
and
applications.
ABSOLUTE MAXIMUM RATINGS
For PNP type voltage and current values are negative.
September 2003
Symbol
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
V
V
V
T
P
I
CEO
CBO
EBO
I
CM
T
I
stg
C
B
tot
j
COMPLEMENTARY SILICON POWER TRANSISTORS
low
Collector-Emitter Voltage (I
Collector-Base Voltage (I
Base-Emitter Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Total Power Dissipation at T
Storage Temperature
Total Power Dissipation at T
®
current,
high
Parameter
speed
C
p
E
= 0)
< 5 ms)
= 0)
B
case
case
= 0)
switching
25
25
o
o
C
C
NPN
PNP
INTERNAL SCHEMATIC DIAGRAM
SOT-32
-65 to 150
MJE182
MJE172
Value
12.5
100
150
80
7
3
6
1
3
2
MJE172
MJE182
1
Unit
o
o
W
V
V
V
A
A
A
C
C
1/4

Related parts for MJE172

MJE172 Summary of contents

Page 1

... COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type) are silicon Epitaxial Planar, complementary transistors in Jedec SOT-32 plastic package. They are designed for low power audio amplifier and low ...

Page 2

... MJE172 - MJE182 THERMAL DATA R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter on BE(sat) Voltage V Base-Emitter on BE Voltage h DC Current Gain ...

Page 3

... MJE172 - MJE182 MAX. 0.307 0.425 0.035 0.025 0.106 0.051 0.630 0.126 0.100 1: Base 2: Collector 3: Emitter 0016114/B 3/4 ...

Page 4

... MJE172 - MJE182 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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