MJE172 STMicroelectronics, MJE172 Datasheet
MJE172
Manufacturer Part Number
MJE172
Description
TRANSISTOR PNP 80V 3A SOT-32
Manufacturer
STMicroelectronics
Type
Amplifier, Powerr
Specifications of MJE172
Transistor Type
PNP
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1.7V @ 600mA, 3A
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 100mA, 1V
Power - Max
12.5W
Frequency - Transition
50MHz
Mounting Type
Through Hole
Package / Case
TO-126-3
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
3 A
Power Dissipation
12.5 W
Continuous Collector Current
3 A
Dc Collector/base Gain Hfe Min
50
Maximum Operating Frequency
50 MHz
Current, Collector
-3 A
Current, Gain
250
Frequency
50 MHz
Package Type
SOT-32
Polarity
PNP
Primary Type
Si
Resistance, Thermal, Junction To Case
10 °C/W
Voltage, Breakdown, Collector To Emitter
-80 V
Voltage, Collector To Base
-100 V
Voltage, Collector To Emitter
-80 V
Voltage, Collector To Emitter, Saturation
-1.7 V
Voltage, Emitter To Base
-7 V
Dc
0027
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2553-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJE172G
Manufacturer:
ON Semiconductor
Quantity:
7 050
Part Number:
MJE172G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MJE172N
Manufacturer:
SIPEX
Quantity:
4 490
Part Number:
MJE172STU
Manufacturer:
ON/安森美
Quantity:
20 000
DESCRIPTION
The MJE172 (PNP type) and MJE182 (NPN type)
are silicon Epitaxial Planar, complementary
transistors in Jedec SOT-32 plastic package.
They are designed for low power audio amplifier
and
applications.
ABSOLUTE MAXIMUM RATINGS
For PNP type voltage and current values are negative.
Symbol
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
V
V
V
T
P
I
CEO
CBO
EBO
I
CM
T
I
stg
C
B
tot
j
COMPLEMENTARY SILICON POWER TRANSISTORS
low
Collector-Emitter Voltage (I
Collector-Base Voltage (I
Base-Emitter Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Total Power Dissipation at T
Storage Temperature
Total Power Dissipation at T
®
current,
high
Parameter
speed
C
p
E
= 0)
< 5 ms)
= 0)
B
case
case
= 0)
switching
25
25
o
o
C
C
NPN
PNP
INTERNAL SCHEMATIC DIAGRAM
SOT-32
-65 to 150
MJE182
MJE172
Value
12.5
100
150
80
7
3
6
1
3
2
MJE172
MJE182
1
Unit
o
o
W
V
V
V
A
A
A
C
C
1/4
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MJE172 Summary of contents
Page 1
... COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type) are silicon Epitaxial Planar, complementary transistors in Jedec SOT-32 plastic package. They are designed for low power audio amplifier and low ...
Page 2
... MJE172 - MJE182 THERMAL DATA R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter on BE(sat) Voltage V Base-Emitter on BE Voltage h DC Current Gain ...
Page 3
... MJE172 - MJE182 MAX. 0.307 0.425 0.035 0.025 0.106 0.051 0.630 0.126 0.100 1: Base 2: Collector 3: Emitter 0016114/B 3/4 ...