2N3019 STMicroelectronics, 2N3019 Datasheet - Page 2

• Manufacturer Part Number: 2N3019
• Description: TRANSISTOR NPN 140V 1A TO-39
• Manufacturer: STMicroelectronics
• Type: Amplifier, High Currentr

Specifications of 2N3019

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 800mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-39-3, TO-205AD, Metal Can
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 7 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 800 mW
• Maximum Operating Frequency: 100 MHz
• Dc Collector/base Gain Hfe Min: 100
• Current, Collector: 1 A
• Current, Gain: 300
• Frequency: 100 MHz
• Package Type: TO-39
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 30 °C/W
• Voltage, Breakdown, Collector To Emitter: 80 V
• Voltage, Collector To Base: 140 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Collector To Emitter, Saturation: 0.5 V
• Voltage, Emitter To Base: 7 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2634-5

2N3019
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/4
V
Pulsed: Pulse duration = 300 s, duty cycle
V
V
V
Symbol
V
r
R
(BR)CEO
bb’
R
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
C
thj-case
h
I
I
h
thj-amb
CBO
NF
EBO
FE
CBO
EBO
f
fe
C
T
b’c
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Base
Breakdown Voltage
(I
Collector-Emitter
Breakdown Voltage
(I
Emitter-Base
Breakdown Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
Small Signal Current
Gain
Transition Frequency
Collector-Base
Capacitance
Emitter-Base
Capacitance
Noise Figure
Feedback Time
Constant
C
E
B
C
= 0)
= 0)
= 0)
= 0)
Parameter
E
= 0)
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
T
I
I
I
I
f = 1KHz
I
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
E
C
C
C
amb
CB
CB
EB
= 100 A
= 0
= 100 A
= 10 mA
= 150 mA
= 500 mA
= 150 mA
= 0.1 mA
= 10 mA
= 150 mA
= 500 mA
= 1A
= 150 mA
= 1 mA
= 50 mA
= 0
= 0.1 mA
= 10 mA
= 5 V
= 90 V
= 90 V
case
= -55
1 %
= 25
V
V
Test Conditions
o
CB
EB
C
V
V
= 10 V
= 0.5 V
R
V
V
o
T
CE
CE
V
I
V
V
V
V
V
C unless otherwise specified)
I
I
B
C
CE
CE
g
CE
B
B
CE
CE
CE
CE
CE
= 15 mA
= 1K
= 10 V
= 5 V
= 150
= 15 mA
= 50 mA
= 10 V f = 20MHz
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
f = 1MHz
o
C
f = 1MHz
f = 4MHz
f = 1KHz
Max
Max
Min.
140
100
100
80
80
50
90
50
15
40
7
187.5
Typ.
30
Max.
300
400
400
0.2
0.5
1.1
10
10
10
12
60
4
o
o
Unit
MHz
C/W
C/W
nA
nA
pF
pF
dB
ps
V
V
V
V
V
V
A