BUL742C STMicroelectronics, BUL742C Datasheet - Page 2

• Manufacturer Part Number: BUL742C
• Description: TRANSISTOR POWER NPN TO-220
• Manufacturer: STMicroelectronics

Specifications of BUL742C

• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 1A, 3.5A
• Current - Collector Cutoff (max): 250µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 800mA, 3V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 400V
• Power Dissipation Pd: 70W
• Dc Collector Current: 3.5A
• Dc Current Gain Hfe: 48
• Transistor Case Style: TO-220
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 497-7208-5; BUL742C

BUL742C
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
* Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %.
2/7
V
V
V
V
Symbol
R
R
CEO(sus)
(BR)EBO
CE(sat)
BE(sat)
thj-case
thj-amb
I
I
h
CEO
CES
E
FE
t
t
s
ar
f
*
*
*
* Collector-Emitter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Collector Cut-off
Current (V
Collector Cut-off
Current (I
Emitter-Base
Breakdown Voltage
(I
Sustaining Voltage
(I
Collector-Emitter
Saturation Voltage
DC Current Gain
RESISTIVE LOAD
Storage Time
Fall Time
Repetitive Avalanche
Energy
Base-Emitter
Saturation Voltage
C
B
= 0)
= 0)
Parameter
B
BE
= 0)
= 0)
V
V
I
I
I
I
I
I
I
I
I
V
L = 2 mH
V
E
C
C
C
C
C
C
C
B1
CE
CE
BB(off)
BE
= 1 mA
= 10 mA
= 1 A
= 3.5 A
= 3.5 A
= 0.1 A
= 0.8 A
= 2 A
= -I
= 1050 V
= 400 V
= -5 V
j
= 25 °C unless otherwise specified)
B2
= -5 V
= 400 mA
Test Conditions
I
I
I
V
V
V
t
(See Figure 1)
C = 1.8 nF
(See Figure 2)
B
B
B
p
CE
CE
CC
= 300 s
= 0.2 A
= 1 A
= 1 A
= 5 V
= 3 V
= 125 V
Max
Max
Min.
400
12
48
25
6
Typ.
1.79
62.5
350
2.4
Max.
100
250
100
0.5
1.5
1.5
24
50
°C/W
°C/W
Unit
mJ
µA
µA
µs
ns
V
V
V
V
V