2SC5242-O(Q,T) Toshiba, 2SC5242-O(Q,T) Datasheet - Page 3
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2SC5242-O(Q,T)
Manufacturer Part Number
2SC5242-O(Q,T)
Description
TRANS NPN 230V 15A 2-16C1A
Manufacturer
Toshiba
Datasheet
1.2SC5242-OQT.pdf
(4 pages)
Specifications of 2SC5242-O(Q,T)
Transistor Type
NPN
Current - Collector (ic) (max)
15A
Voltage - Collector Emitter Breakdown (max)
230V
Vce Saturation (max) @ Ib, Ic
3V @ 800mA, 8A
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 1A, 5V
Power - Max
130W
Frequency - Transition
30MHz
Mounting Type
Through Hole
Package / Case
2-16C1A (TO-247 N)
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
230 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
15 A
Power Dissipation
130 W
Dc Collector/base Gain Hfe Min
55
Gain Bandwidth Product Ft
30 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SC5242-O(Q)
2SC5242-OQ
2SC5242-OQ
2SC5242-OQ
2SC5242-OQ
0.03
0.01
0.05
0.03
0.3
0.1
0.5
0.3
0.1
20
16
12
50
30
10
0.01
8
4
0
3
1
5
3
1
0
3
DC operation
Tc = 25°C
I C max (pulsed)*
I C max (continuous)
*: Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature.
−25
Tc = 25°C
800
Collector-emitter voltage V
Collector-emitter voltage V
10
2
600
100 ms*
0.1
25
Collector current I
400
Safe Operating Area
300
V
30
CE (sat)
4
I
250
C
200
Tc = 100°C
– V
10 ms*
150
1
CE
I B = 10 mA
1 ms*
100
– I
100
6
C
C
Common emitter
I C /I B = 10
Common emitter
Tc = 25°C
CE
(A)
CE
10
300
50
V CEO max
8
(V)
(V)
40
30
20
1000
100
10
3
300
100
20
16
12
30
10
0.01
8
4
0
3
1
0
Common emitter
V CE = 5 V
Common emitter
V CE = 5 V
−25
Tc = 100°C
25
0.4
Base-emitter voltage V
0.1
Tc = 100°C
Collector current I
0.8
I
h
C
FE
−25
– V
1
– I
25
BE
C
1.2
C
BE
(A)
10
(V)
1.6
2004-07-07
2SC5242
100
2.0