2SA1962-O(Q) Toshiba, 2SA1962-O(Q) Datasheet - Page 2

• Manufacturer Part Number: 2SA1962-O(Q)
• Description: TRANS PNP -230V -15A 2-16C1A
• Manufacturer: Toshiba

Specifications of 2SA1962-O(Q)

• Transistor Type: PNP
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 230V
• Vce Saturation (max) @ Ib, Ic: 3V @ 800mA, 8A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 1A, 5V
• Power - Max: 130W
• Frequency - Transition: 30MHz
• Mounting Type: Through Hole
• Package / Case: 2-16C1A (TO-247 N)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 2SA1962-OQ

Electrical Characteristics
Marking
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Note: h
Characteristics
FE (1)
indicator
Characteristics
TOSHIBA
classification R: 55 to 110, O: 80 to 160
A1962
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Tc = 25°C)
V
V
Symbol
(BR) CEO
h
h
CE (sat)
I
I
FE (1)
FE (2)
V
CBO
EBO
C
f
BE
T
ob
(Note)
V
V
I
V
V
I
V
V
V
C
C
CB
EB
CE
CE
CE
CE
CB
= −50 mA, I
= −8 A, I
= −230 V, I
= −5 V, I
= −5 V, I
= −5 V, I
= −5 V, I
= −5 V, I
= −10 V, I
2
B
Test Condition
= −0.8 A
C
C
C
C
C
B
E
= 0
= −1 A
= −7 A
= −7 A
= −1 A
E
= 0
= 0, f = 1 MHz
= 0
−230
Min
55
35
―
―
―
―
―
―
Typ.
−1.5
−1.0
360
60
30
―
―
―
―
2006-11-09
2SA1962
−5.0
−5.0
−3.0
−1.5
Max
160
―
―
―
―
MHz
Unit
μA
μA
pF
V
V
V