2SC5200-O(Q) Toshiba, 2SC5200-O(Q) Datasheet - Page 3

• Manufacturer Part Number: 2SC5200-O(Q)
• Description: TRANS NPN 230V 15A 2-21F1A
• Manufacturer: Toshiba

Specifications of 2SC5200-O(Q)

• Transistor Type: NPN
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 230V
• Vce Saturation (max) @ Ib, Ic: 3V @ 800mA, 8A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 1A, 5V
• Power - Max: 150W
• Frequency - Transition: 30MHz
• Mounting Type: Through Hole
• Package / Case: 2-21F1A (TO-247 L)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 230 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 15 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 80
• Maximum Operating Frequency: 30 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SC5200-0(Q); 2SC5200-OQ

0.03
0.01
0.05
0.03
0.3
0.1
0.5
0.3
0.1
20
16
12
50
30
10
0.01
8
4
0
3
1
5
3
1
0
3
*: Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature.
I C max (pulsed)*
I C max (continuous)
DC operation
−25
Tc = 25°C
Tc = 25°C
800
Collector-emitter voltage V
Collector-emitter voltage V
10
2
600
100 ms*
0.1
25
Collector current I
400
Safe Operating Area
300
V
30
CE (sat)
4
I
250
C
200
Tc = 100°C
– V
10 ms*
150
1
CE
I B = 10 mA
1 ms*
100
– I
100
6
C
C
Common emitter
I C /I B = 10
Common emitter
Tc = 25°C
CE
(A)
CE
10
300
50
V CEO max
8
(V)
(V)
40
30
20
1000
100
10
3
300
100
20
16
12
30
10
0.01
8
4
0
3
1
0
Common emitter
V CE = 5 V
Common emitter
V CE = 5 V
−25
Tc = 100°C
25
0.4
Base-emitter voltage V
0.1
Tc = 100°C
Collector current I
0.8
I
h
C
FE
−25
– V
1
– I
25
BE
C
1.2
C
BE
(A)
10
(V)
1.6
2004-07-07
2SC5200
100
2.0