SMBTA 06 E6327 Infineon Technologies, SMBTA 06 E6327 Datasheet
SMBTA 06 E6327
Specifications of SMBTA 06 E6327
SMBTA06E6327INTR
SMBTA06E6327XT
SP000011686
Related parts for SMBTA 06 E6327
SMBTA 06 E6327 Summary of contents
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NPN Silicon AF Transistor Low collector-emitter saturation voltage Complementary type: SMBTA 56 / MMBTA56 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type SMBTA06/MMBTA06 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage I = 100 µ Emitter-base breakdown voltage µ ...
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DC current gain 100 - Base-emitter saturation voltage ...
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Collector cutoff current I CBO CBO CBO Collector-base capacitance C Emitter-base capacitance ...
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Permissible Pulse Load totmax totDC tot max tot ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...