BC860C,215 NXP Semiconductors, BC860C,215 Datasheet - Page 4
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BC860C,215
Manufacturer Part Number
BC860C,215
Description
TRANSISTOR PNP 45V 100MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BC860C215.pdf
(8 pages)
Specifications of BC860C,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
250mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
250 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4871-2
933628700215
BC860C T/R
BC860C T/R
BC860C,215
933628700215
BC860C T/R
BC860C T/R
BC860C,215
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC860C,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
CHARACTERISTICS
T
Notes
1. V
2. V
2004 Jan 16
I
I
h
V
V
V
C
C
f
F
j
CBO
EBO
T
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
BE
PNP general purpose transistors
c
e
BEsat
BE
decreases by about −2 mV/K with increasing temperature.
decreases by about −1.7 mV/K with increasing temperature.
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
noise figure
BC859B; BC860B
BC859C; BC860C
BC859B; BC860B;
BC859C; BC860C
BC859B; BC860B;
BC859C; BC860C
PARAMETER
I
I
I
I
see Figs 2 and 3
I
I
I
I
I
I
I
I
I
I
f = 30 Hz to 15 kHz
I
f = 1 kHz; B = 200 Hz
E
E
C
C
C
C
C
C
C
C
E
C
C
C
C
= 0; V
= 0; V
= I
= 0; V
= −2 mA; V
= −10 mA; I
= −100 mA; I
= −10 mA; I
= −100 mA; I
= −2 mA; V
= −10 mA; V
= I
= −10 mA; V
= −200 μA; V
= −200 μA; V
e
c
= 0; V
= 0; V
CB
CB
EB
4
= −30 V
= −30 V; T
= −5 V
CONDITIONS
CB
EB
CE
CE
B
B
CE
CE
B
B
= −500 mV; f = 1 MHz −
= −10 V; f = 1 MHz
CE
CE
= −0.5 mA
= −0.5 mA; note 1
= −5 V;
= −5 V; note 2
= −5 mA
= −5 mA; note 1
= −5 V; note 2
= −5 V; f = 100 MHz 100
= −5 V; R
= −5 V; R
j
= 150 °C
S
S
= 2 kΩ;
= 2 kΩ;
−
−
−
220
420
−
−
−
−
−600
−
−
−
−
MIN.
BC859; BC860
−1
−
−
−
−
−75
−250
−700
−850
−650
−
4.5
10
−
−
−
TYP.
Product data sheet
−15
−4
−100
475
800
−300
−650
−
−
−750
−820
−
−
−
4
4
MAX. UNIT
nA
μA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
dB