BC860C,215 NXP Semiconductors, BC860C,215 Datasheet - Page 5
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BC860C,215
Manufacturer Part Number
BC860C,215
Description
TRANSISTOR PNP 45V 100MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BC860C215.pdf
(8 pages)
Specifications of BC860C,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
250mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
250 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4871-2
933628700215
BC860C T/R
BC860C T/R
BC860C,215
933628700215
BC860C T/R
BC860C T/R
BC860C,215
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC860C,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
2004 Jan 16
handbook, full pagewidth
handbook, full pagewidth
PNP general purpose transistors
BC859B; BC860B.
BC859C; BC860C.
h FE
h FE
400
300
200
100
600
500
400
300
200
100
−10
−10
0
0
−2
−2
−10
−10
−1
−1
Fig.2 DC current gain; typical values.
Fig.3 DC current gain; typical values.
−1
−1
5
−10
−10
V CE = −5 V
V CE = −5 V
−10
−10
2
2
BC859; BC860
I C (mA)
I C (mA)
Product data sheet
MBH727
MBH728
−10
−10
3
3