PBSS4140T,215 NXP Semiconductors, PBSS4140T,215 Datasheet - Page 6

• Manufacturer Part Number: PBSS4140T,215
• Description: TRANS NPN 40V 1000MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS4140T,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 500mA, 5V
• Power - Max: 450mW
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 450 mW
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4154-2; 934056515215; PBSS4140T T/R; PBSS4140T T/R

NXP Semiconductors
2005 Feb 24
handbook, halfpage
40 V, 1A
NPN low V
V
Fig.6
(MHz)
CE
400
f T
300
200
100
= 10 V.
0
0
Transition frequency as a function of
collector current.
200
CEsat
400
(BISS) transistor
600
800
I C (mA)
MLD664
1000
6
PBSS4140T
Product data sheet