PBSS5350Z,135 NXP Semiconductors, PBSS5350Z,135 Datasheet - Page 7

• Manufacturer Part Number: PBSS5350Z,135
• Description: TRANS NPN 50V 3A SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBSS5350Z,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 2W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 2000 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4171-2; 934056527135; PBSS5350Z /T3; PBSS5350Z /T3

NXP Semiconductors
PACKAGE OUTLINE
2003 May 13
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
50 V low V
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT223
1.8
1.5
A
0.10
0.01
A
1
1
CEsat
y
0.80
0.60
b
p
IEC
PNP transistor
e
3.1
2.9
1
b
1
b
0.32
0.22
D
e
1
c
2
b
6.7
6.3
D
p
JEDEC
4
3.7
3.3
E
REFERENCES
3
0
4.6
e
w
B
M
2.3
e
SC-73
B
scale
1
EIAJ
7
2
c
H
7.3
6.7
E
A
4 mm
1.1
0.7
L
1
p
0.95
0.85
Q
0.2
v
H
E
E
detail X
0.1
w
PROJECTION
EUROPEAN
0.1
y
A
L
p
Q
PBSS5350Z
Product data sheet
X
ISSUE DATE
97-02-28
99-09-13
v
A
M
A
SOT223