PMBT2222,215 NXP Semiconductors, PMBT2222,215 Datasheet - Page 4

• Manufacturer Part Number: PMBT2222,215
• Description: TRANS NPN 30V 600MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBT2222,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 30
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 600 mA
• Maximum Dc Collector Current: 800 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933846830215; PMBT2222 T/R; PMBT2222 T/R

NXP Semiconductors
7. Characteristics
PMBT2222_PMBT2222A
Product data sheet
Table 8.
T
Symbol
I
h
V
I
CBO
EBO
j
FE
CEsat
= 25
°
C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off
current
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation voltage
PMBT2222
PMBT2222A
PMBT2222
PMBT2222A
PMBT2222
PMBT2222A
PMBT2222
PMBT2222A
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 12 November 2010
V
V
Conditions
V
V
T
V
V
T
V
I
V
I
V
I
V
I
T
V
I
V
I
I
I
I
I
I
C
C
C
C
C
C
C
C
B
C
B
j
j
amb
CB
CB
CB
CB
EB
CE
CE
CE
CE
CE
CE
CE
= 125 °C
= 125 °C
= 0.1 mA
= 1 mA
= 10 mA
= 10 mA;
= 150 mA
= 150 mA
= 500 mA
= 150 mA;
= 15 mA
= 500 mA;
= 50 mA
PMBT2222; PMBT2222A
= 50 V; I
= 50 V; I
= 60 V; I
= 60 V; I
= 5 V; I
= 10 V;
= 10 V;
= 10 V;
= 10 V;
= 10 V;
= 1 V;
= 10 V;
= −55 °C
C
E
E
E
E
= 0 A
= 0 A
= 0 A;
= 0 A
= 0 A;
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
35
50
75
35
100
50
30
40
-
-
-
-
NPN switching transistors
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Max
10
10
10
10
10
-
-
-
300
-
-
-
400
300
1.6
1
Unit
nA
μA
nA
μA
nA
mV
mV
V
V
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