PMSS3906,115 NXP Semiconductors, PMSS3906,115 Datasheet

TRANS PNP 40V 100MA SOT323

PMSS3906,115

Manufacturer Part Number
PMSS3906,115
Description
TRANS PNP 40V 100MA SOT323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMSS3906,115

Package / Case
SC-70-3, SOT-323-3
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
200mW
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
200 mW
Maximum Operating Frequency
150 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934026910115
PMSS3906 T/R
PMSS3906 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMSS3906,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Product data sheet
Supersedes data of 1999 Apr 22
dbook, halfpage
DATA SHEET
PMSS3906
PNP switching transistor
DISCRETE SEMICONDUCTORS
M3D187
2004 Jan 09

Related parts for PMSS3906,115

PMSS3906,115 Summary of contents

Page 1

DATA SHEET dbook, halfpage PMSS3906 PNP switching transistor Product data sheet Supersedes data of 1999 Apr 22 DISCRETE SEMICONDUCTORS M3D187 2004 Jan 09 ...

Page 2

... NXP Semiconductors PNP switching transistor FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching, e.g. telephony and professional communication equipment. DESCRIPTION PNP switching transistor in an SOT323 (SC-70) plastic package. NPN complement: PMSS3904. PRODUCT OVERVIEW TYPE NUMBER ...

Page 3

... NXP Semiconductors PNP switching transistor ORDERING INFORMATION TYPE NUMBER NAME − PMSS3906 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current ...

Page 4

... NXP Semiconductors PNP switching transistor CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage V base-emitter saturation voltage BEsat C collector capacitance c C emitter capacitance e f transition frequency ...

Page 5

... NXP Semiconductors PNP switching transistor handbook, full pagewidth = − 500 µ µ Ω 2.5 kΩ 3.9 kΩ 1 Ω. Oscilloscope input impedance Z i 2004 Jan (probe) oscilloscope 450 Ω ≤ 270 Ω. C Fig.1 Test circuit for switching times (probe) oscilloscope 450 Ω ...

Page 6

... NXP Semiconductors PNP switching transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT b p max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 2004 Jan scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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