PMSS3906,115 NXP Semiconductors, PMSS3906,115 Datasheet - Page 4

• Manufacturer Part Number: PMSS3906,115
• Description: TRANS PNP 40V 100MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of PMSS3906,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 200mW
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934026910115; PMSS3906 T/R; PMSS3906 T/R

NXP Semiconductors
CHARACTERISTICS
T
Note
1.
2004 Jan 09
I
I
h
V
V
C
C
f
F
Switching times (between 10% and 90% levels); see Fig.1
t
t
t
t
t
t
amb
CBO
EBO
T
on
d
r
off
s
f
SYMBOL
FE
CEsat
BEsat
PNP switching transistor
c
e
Pulse test: t
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
turn-on time
delay time
rise time
turn-off time
storage time
fall time
p
≤ 300 µs; δ ≤ 0.02.
PARAMETER
I
I
I
V
I
I
I
I
I
I
I
I
f = 10 Hz to 15.7 kHz
I
E
E
C
C
C
C
C
E
C
E
C
Con
CE
I
I
I
I
I
= 0; V
= 0; V
= 0; V
= −10 mA; I
= −50 mA; I
= −10 mA; I
= −50 mA; I
= i
= i
= −10 mA; V
= −100 µA; V
C
C
C
C
C
= −10 mA; I
= −1 V
= −0.1 mA
= −1 mA
= −10 mA
= −50 mA; note 1
= −100 mA; note 1
e
c
= 0; V
= 0; V
CB
CB
EB
4
= −30 V
= −30 V; T
= −5 V
CB
EB
CONDITIONS
B
B
B
B
CB
= −5 V; f = 1 MHz
= −0.5 V; f = 1 MHz
CE
= −1 mA
= −5 mA; note 1
= −1 mA
= −5 mA; note 1
Bon
= −20 V; f = 100 MHz
= −5 V; R
= −1 mA; I
j
= 150 °C
S
= 1 kΩ;
Boff
= 1 mA −
−
−
−
60
80
100
60
30
−
−
−
−
−
−
150
−
−
−
−
−
−
MIN.
PMSS3906
Product data sheet
−50
−10
−50
−
−
300
−
−
−250
−400
−850
−950
4.5
14
−
4
100
50
50
700
600
100
MAX.
nA
µA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
ns
ns
ns
ns
ns
ns
UNIT