PMSS3906,115 NXP Semiconductors, PMSS3906,115 Datasheet - Page 4
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PMSS3906,115
Manufacturer Part Number
PMSS3906,115
Description
TRANS PNP 40V 100MA SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.PMSS3906115.pdf
(8 pages)
Specifications of PMSS3906,115
Package / Case
SC-70-3, SOT-323-3
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
200mW
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
200 mW
Maximum Operating Frequency
150 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934026910115
PMSS3906 T/R
PMSS3906 T/R
PMSS3906 T/R
PMSS3906 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMSS3906,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
CHARACTERISTICS
T
Note
1.
2004 Jan 09
I
I
h
V
V
C
C
f
F
Switching times (between 10% and 90% levels); see Fig.1
t
t
t
t
t
t
amb
CBO
EBO
T
on
d
r
off
s
f
SYMBOL
FE
CEsat
BEsat
PNP switching transistor
c
e
Pulse test: t
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
turn-on time
delay time
rise time
turn-off time
storage time
fall time
p
≤ 300 µs; δ ≤ 0.02.
PARAMETER
I
I
I
V
I
I
I
I
I
I
I
I
f = 10 Hz to 15.7 kHz
I
E
E
C
C
C
C
C
E
C
E
C
Con
CE
I
I
I
I
I
= 0; V
= 0; V
= 0; V
= −10 mA; I
= −50 mA; I
= −10 mA; I
= −50 mA; I
= i
= i
= −10 mA; V
= −100 µA; V
C
C
C
C
C
= −10 mA; I
= −1 V
= −0.1 mA
= −1 mA
= −10 mA
= −50 mA; note 1
= −100 mA; note 1
e
c
= 0; V
= 0; V
CB
CB
EB
4
= −30 V
= −30 V; T
= −5 V
CB
EB
CONDITIONS
B
B
B
B
CB
= −5 V; f = 1 MHz
= −0.5 V; f = 1 MHz
CE
= −1 mA
= −5 mA; note 1
= −1 mA
= −5 mA; note 1
Bon
= −20 V; f = 100 MHz
= −5 V; R
= −1 mA; I
j
= 150 °C
S
= 1 kΩ;
Boff
= 1 mA −
−
−
−
60
80
100
60
30
−
−
−
−
−
−
150
−
−
−
−
−
−
MIN.
PMSS3906
Product data sheet
−50
−10
−50
−
−
300
−
−
−250
−400
−850
−950
4.5
14
−
4
100
50
50
700
600
100
MAX.
nA
µA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
ns
ns
ns
ns
ns
ns
UNIT