BGA2776 T/R NXP Semiconductors, BGA2776 T/R Datasheet - Page 2

• Manufacturer Part Number: BGA2776 T/R
• Description: RF Amplifier TAPE-7 MMIC-RFS
• Manufacturer: NXP Semiconductors
• Type: MMIC Wideband Medium Power Amplifierr

Specifications of BGA2776 T/R

• Operating Frequency: 1 GHz
• Noise Figure: 4.9 dB
• Bandwidth: 2800 MHz
• Operating Supply Voltage: 5 V
• Supply Current: 24.4 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Number Of Channels: 1 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGA2776,115

NXP Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
QUICK REFERENCE DATA
V
I
NF
P
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
S
s
Internally matched
Very wide frequency range
Very flat gain
High gain
High output power
Unconditionally stable.
Cable systems
LNB IF amplifiers
General purpose
ISM.
SYMBOL
S
L(sat)
MMIC wideband amplifier
21
2
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
PARAMETER
Rev. 04 – 29 August 2007
f = 1 GHz
f = 1 GHz
f = 1 GHz
CAUTION
PINNING
CONDITIONS
Marking code: G5-.
PIN
2, 5
Fig.1 Simplified outline (SOT363) and symbol.
1
3
4
6
Top view
1
6
V
GND2
RF out
GND1
RF in
S
5
2
4
3
MAM455
DESCRIPTION
5
24.4
23.2
4.9
10.5
TYP.
6
Product specification
4
6
MAX.
BGA2776
1
2, 5
2 of 10
3
V
mA
dB
dB
dBm
UNIT