BC857,215 NXP Semiconductors, BC857,215 Datasheet - Page 4

• Manufacturer Part Number: BC857,215
• Description: TRANSISTOR PNP 45V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BC857,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Transistor Type: PNP
• Frequency - Transition: 100MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 125 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Collector/base Gain Hfe Min: 125 at 2 mA at 5 V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 125
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933589740215::BC857 T/R::BC857 T/R

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Jan 16
I
I
h
V
V
V
C
f
F
amb
CBO
EBO
T
FE
CEsat
BEsat
BE
PNP general purpose transistors
c
SYMBOL
= 25 °C unless otherwise specified.
p
≤ 300 μs; δ ≤ 0.02.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
BC856
BC857
BC856A; BC857A
BC856B; BC857B; BC858B
BC857C
PARAMETER
V
V
T
V
I
I
I
note 1
I
I
note 1
I
I
V
f = 1 MHz
V
f = 100 MHz
I
R
B = 200 Hz
C
C
C
C
C
C
C
C
j
4
CB
CB
EB
CB
CE
S
= 150 °C
= −2 mA; V
= −10 mA; I
= −100 mA; I
= −10 mA; I
= −100 mA; I
= −2 mA; V
= −10 mA; V
= −200 μA; V
= 2 kΩ; f = 1 kHz;
= −5 V; I
= −30 V; I
= −30 V; I
= −10 V; I
= −5 V; I
CONDITIONS
C
C
CE
CE
E
E
B
B
E
= 0
= −10 mA;
CE
B
B
CE
= 0
= 0;
= −0.5 mA −
= −0.5 mA −
= I
= −5 V
= −5 V
= −5 mA;
= −5 mA;
= −5 V
e
= −5 V;
= 0;
BC856; BC857; BC858
−
−
−
125
125
125
220
420
−
−
−600
−
−
100
−
MIN.
−1
−
−
−
−
−
−
−
−75
−250
−700
−850
−650
−
4.5
−
2
TYP.
Product data sheet
−15
−4
−100
475
800
250
475
800
−300
−650
−
−
−750
−820
−
−
10
MAX.
nA
μA
nA
mV
mV
mV
mV
mV
mV
pF
MHz
dB
UNIT