PMBS3904,235 NXP Semiconductors, PMBS3904,235 Datasheet - Page 3

• Manufacturer Part Number: PMBS3904,235
• Description: TRANS NPN 40V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBS3904,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 180MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 180 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933972890235; PMBS3904 /T3; PMBS3904 /T3

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Feb 02
R
I
I
h
V
V
C
C
f
F
Switching times (between 10% and 90% levels); (see Fig.3)
t
t
t
t
t
t
amb
CBO
EBO
T
on
d
r
off
s
f
SYMBOL
SYMBOL
FE
CEsat
BEsat
NPN general purpose transistor
th(j-a)
c
e
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
turn-on time
delay time
rise time
turn-off time
storage time
fall time
p
≤ 300 µs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
V
I
I
I
I
I
I
I
I
f = 10 Hz to 15.7 kHz
I
I
V
E
C
C
C
C
C
E
C
C
C
Con
Boff
CE
BB
I
I
I
I
I
= 0; V
= i
= 0; V
= 10 mA; I
= 50 mA; I
= 10 mA; I
= 50 mA; I
= i
= 10 mA; V
= 100 µA; V
C
C
C
C
C
= − 1 mA; V
= 10 mA; I
= −1.9 V
= 1 V; note 1; (see Fig.2)
= 0.1 mA
= 1 mA
= 10 mA
= 50 mA
= 100 mA
e
c
= 0; V
= 0; V
CB
EB
3
CONDITIONS
= 30 V
= 5 V
CB
EB
B
B
B
B
CE
note 1
CE
= 1 mA
= 5 mA
= 1 mA
= 5 mA
Bon
= 0.5 V; f = 1 MHz
= 5 V; f = 1 MHz
CC
= 20 V; f = 100 MHz 180
= 5 V; R
CONDITIONS
= 1 mA;
= 3 V;
S
= 1 kΩ;
−
−
40
70
100
60
30
−
−
650
−
−
−
−
−
−
−
−
−
−
MIN.
VALUE
500
50
50
−
−
300
−
−
200
300
850
950
4
12
−
5
110
50
60
1 200
1 000
200
PMBS3904
Product data sheet
MAX.
UNIT
K/W
nA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
ns
ns
ns
ns
ns
ns
UNIT