BC857AT,115 NXP Semiconductors, BC857AT,115 Datasheet - Page 3
![TRANSISTOR PNP 45V 100MA SC-75](/photos/5/31/53190/568-emt3_sot-416_sc-75_sot416_sml.jpg)
BC857AT,115
Manufacturer Part Number
BC857AT,115
Description
TRANSISTOR PNP 45V 100MA SC-75
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.BC856BT115.pdf
(9 pages)
Specifications of BC857AT,115
Package / Case
EMT3 (SOT-416, SC-75-3)
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
125 @ 2mA, 5V
Power - Max
150mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.2 A
Power Dissipation
150 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934051100115
BC857AT T/R
BC857AT T/R
BC857AT T/R
BC857AT T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC857AT,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
2000 Nov 15
R
I
I
h
V
V
C
C
f
F
SYMBOL
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BE
PNP general purpose transistors
th j-a
c
e
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector-base cut-off current V
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
BC856AT; BC857AT
BC856BT; BC857BT
BC857CT
p
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
V
V
V
I
I
I
I
V
V
I
f = 100 MHz
I
R
C
C
C
C
C
C
CB
CB
EB
CE
CB
EB
S
= −10 mA; I
= −100 mA; I
= −2 mA; V
= −10 mA; V
= −10 mA; V
= −200 μA; V
= 2 kΩ; f = 1 kHz; B = 200 Hz
= −5 V; I
= −0.5 V; f = 1 MHz; I
= −30 V; I
= −30 V; I
= −5 V; I
= −10 V; f = 1 MHz; I
CONDITIONS
C
C
CE
E
E
B
= 0
= −2 mA
CE
CE
B
3
CE
= 0
= 0; T
= −0.5 mA
= −5 V
= −5 mA; note 1
= −5 V
= −5 V;
= −5 V;
in free air; note 1
j
= 150 °C
E
CONDITIONS
C
= i
= i
e
c
= 0
= 0
BC856T; BC857T series
−
−
−
125
220
420
−
−
−580
−
−
−
100
−
MIN.
−
−
−
−
−
−
−
−
−
−
−
10
−
−
TYP.
VALUE
833
Product data sheet
−15
−5
−100
250
475
800
−200
−400
−700
−770
2.5
−
−
10
MAX.
UNIT
K/W
nA
μA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
UNIT