BC857AT/R NXP Semiconductors, BC857AT/R Datasheet
BC857AT/R
Specifications of BC857AT/R
Related parts for BC857AT/R
BC857AT/R Summary of contents
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DATA SHEET BC856; BC857; BC858 PNP general purpose transistors Product data sheet Supersedes data of 2003 Apr 09 DISCRETE SEMICONDUCTORS 2004 Jan 16 ...
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... NXP Semiconductors PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC846, BC847 and BC848. MARKING TYPE NUMBER BC856 ...
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... NXP Semiconductors PNP general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BC856 BC857 BC858 V collector-emitter voltage CEO BC856 BC857 BC858 V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current ...
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... NXP Semiconductors PNP general purpose transistors CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE BC856 BC857 BC856A; BC857A BC856B; BC857B; BC858B BC857C V collector-emitter saturation voltage CEsat V base-emitter saturation voltage BEsat ...
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... NXP Semiconductors PNP general purpose transistors 500 handbook, halfpage h FE 400 (1) 300 (2) 200 (3) 100 0 −2 −1 −10 −10 −1 −10 = −5 V. BC857A 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values. ...
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... NXP Semiconductors PNP general purpose transistors 1000 handbook, halfpage h FE 800 600 (1) 400 (2) 200 (3) 0 −2 −1 −10 −10 −1 −10 = −5 V. BC857B 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.6 DC current gain as a function of collector current; typical values. ...
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... NXP Semiconductors PNP general purpose transistors 1000 handbook, halfpage h FE (1) 800 600 (2) 400 (3) 200 0 −2 −1 −10 −10 −1 −10 = −5 V. BC857C 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.10 DC current gain as a function of collector current; typical values. ...
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... NXP Semiconductors PNP general purpose transistors PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...