BC857AT/R NXP Semiconductors, BC857AT/R Datasheet - Page 6

• Manufacturer Part Number: BC857AT/R
• Description: Trans GP BJT PNP 45V 0.1A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: PNPr

Specifications of BC857AT/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 125@2mA@5V
• Maximum Operating Frequency: 100(Min) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.7(Typ)@0.5mA@10mA|0.85(Typ)@5mA@100mA V
• Maximum Collector Emitter Saturation Voltage: 0.3@0.5mA@10mA|0.65@5mA@100mA V
• Maximum Collector Base Voltage: 50 V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
2004 Jan 16
handbook, halfpage
handbook, halfpage
PNP general purpose transistors
V CEsat
BC857B; V
(1) T
(2) T
(3) T
Fig.6
BC857B; I
(1) T
(2) T
(3) T
Fig.8
(mV)
h FE
1000
−10
−10
−10
800
600
400
200
−10
−10
−10
amb
amb
amb
amb
amb
amb
0
4
3
2
−1
−2
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
DC current gain as a function of collector
current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
C
CE
/I
B
= −5 V.
= 20.
−10
−1
−1
(1)
(3)
(2)
−1
(1)
(2)
(3)
−10
−10
−10
−10
2
I C (mA)
I C (mA)
2
MGT715
MGT717
−10
−10
3
3
6
handbook, halfpage
handbook, halfpage
V BEsat
(mV)
V BE
(mV)
BC857B; V
(1) T
(2) T
(3) T
Fig.7
BC857B; I
(1) T
(2) T
(3) T
Fig.9
−1000
−1200
−1200
−1000
−800
−600
−400
−200
−800
−600
−400
−200
−10
−10
amb
amb
amb
amb
amb
amb
0
0
−2
−1
= −55 °C.
= 25 °C.
= 150 °C.
= −55 °C.
= 25 °C.
= 150 °C.
Base-emitter voltage as a function of
collector current; typical values.
Base-emitter saturation voltage as a
function of collector current; typical values.
C
CE
/I
B
= −5 V.
= 20.
−10
−1
−1
BC856; BC857; BC858
(1)
(2)
(3)
−1
(1)
(2)
(3)
−10
−10
−10
Product data sheet
−10
2
I C (mA)
I C (mA)
2
MGT716
MGT718
−10
−10
3
3