MMBT2222A,215 NXP Semiconductors, MMBT2222A,215 Datasheet

TRANS NPN 40V 600MA SOT23

MMBT2222A,215

Manufacturer Part Number
MMBT2222A,215
Description
TRANS NPN 40V 600MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.MMBT2222A215.pdf (7 pages)

Specifications of MMBT2222A,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
250mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.6 A
Power Dissipation
250 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage
75V
Emitter-base Voltage
6V
Collector Current (dc) (max)
600mA
Frequency (max)
300MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4509-2
933545610215
MMBT2222A T/R
MMBT2222A T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MMBT2222A,215
Manufacturer:
NXP
Quantity:
12 000
Product data sheet
Supersedes data of 2000 Apr 11
DATA SHEET
MMBT2222A
NPN switching transistor
DISCRETE SEMICONDUCTORS
2004 Jan 16

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MMBT2222A,215 Summary of contents

Page 1

DATA SHEET MMBT2222A NPN switching transistor Product data sheet Supersedes data of 2000 Apr 11 DISCRETE SEMICONDUCTORS 2004 Jan 16 ...

Page 2

... NXP Semiconductors NPN switching transistor FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification. DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: PMBT2907A. MARKING TYPE NUMBER MMBT2222A Note Made in Hong Kong. ...

Page 3

... NXP Semiconductors NPN switching transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient note 1 th(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain ...

Page 4

... NXP Semiconductors NPN switching transistor handbook, full pagewidth = 9 500 µ µ Ω 325 Ω 325 Ω −3 29 Ω. Oscilloscope: input impedance Z i 2004 Jan (probe) oscilloscope 450 Ω ≤ 160 Ω. C Fig.2 Test circuit for switching times (probe) oscilloscope 450 Ω ...

Page 5

... NXP Semiconductors NPN switching transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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