2PB709ASW,115 NXP Semiconductors, 2PB709ASW,115 Datasheet - Page 7

• Manufacturer Part Number: 2PB709ASW,115
• Description: TRANSISTOR PNP 45V 100MA SC59
• Manufacturer: NXP Semiconductors

Specifications of 2PB709ASW,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 10mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 290 @ 2mA, 10V
• Power - Max: 200mW
• Frequency - Transition: 80MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 210
• Gain Bandwidth Product Ft: 70 MHz
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 45 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 200 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 80 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2PB709ASW T/R; 2PB709ASW T/R; 934057080115

NXP Semiconductors
10. Soldering
2PB709ART_1
Product data sheet
Fig 8. Reflow soldering footprint SOT23 (TO-236AB)
Fig 9. Wave soldering footprint SOT23 (TO-236AB)
4.60
3.00
4.00
0.85
0.85
1.20
1.30
Rev. 01 — 19 March 2007
2
2
3.40
2.80
4.50
2.90
2.50
1.00
3.30
3
3
1.20 (2x)
0.50 (3x)
1
0.60 (3x)
45 V, 100 mA PNP general-purpose transistor
1
0.60
(3x)
Dimensions in mm
preferred transport direction during soldering
sot023
2.70
solder lands
solder resist
occupied area
Dimensions in mm
2PB709ART
solder lands
solder resist
solder paste
occupied area
© NXP B.V. 2007. All rights reserved.
sot023
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