PMSS3904,115 NXP Semiconductors, PMSS3904,115 Datasheet

TRANS NPN 40V 100MA SOT323

PMSS3904,115

Manufacturer Part Number
PMSS3904,115
Description
TRANS NPN 40V 100MA SOT323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMSS3904,115

Package / Case
SC-70-3, SOT-323-3
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
200mW
Frequency - Transition
180MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
200 mW
Maximum Operating Frequency
180 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934026800115
PMSS3904 T/R
PMSS3904 T/R
Product data sheet
Supersedes data of 1997 Sep 03
dbook, halfpage
DATA SHEET
PMSS3904
NPN switching transistor
DISCRETE SEMICONDUCTORS
M3D187
1999 May 27

Related parts for PMSS3904,115

PMSS3904,115 Summary of contents

Page 1

DATA SHEET dbook, halfpage PMSS3904 NPN switching transistor Product data sheet Supersedes data of 1997 Sep 03 DISCRETE SEMICONDUCTORS M3D187 1999 May 27 ...

Page 2

... NXP Semiconductors NPN switching transistor FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • General purpose switching and amplification • Telephony and professional communication equipment. DESCRIPTION NPN switching transistor in an SC-70 (SOT323) plastic package. PNP complement: PMSS3906. ...

Page 3

... NXP Semiconductors NPN switching transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain FE V collector-emitter saturation voltage ...

Page 4

... NXP Semiconductors NPN switching transistor 300 handbook, full pagewidth h FE 200 100 0 − handbook, full pagewidth = 500 μ μ Ω 2.5 kΩ 3.9 kΩ Ω. Oscilloscope: input impedance Z i 1999 May 27 −1 1 Fig.2 DC gain current; typical values (probe) oscilloscope 450 Ω ...

Page 5

... NXP Semiconductors NPN switching transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT b p max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 1999 May scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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