PMSS3904 /T3 NXP Semiconductors, PMSS3904 /T3 Datasheet

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PMSS3904 /T3

Manufacturer Part Number
PMSS3904 /T3
Description
Transistors Bipolar - BJT TRANS SW TAPE-11
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMSS3904 /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
180 MHz
Dc Collector/base Gain Hfe Min
40 at 0.1 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-323
Continuous Collector Current
0.1 A
Maximum Power Dissipation
200 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
PMSS3904,135
Product data sheet
Supersedes data of 1997 Sep 03
dbook, halfpage
DATA SHEET
PMSS3904
NPN switching transistor
DISCRETE SEMICONDUCTORS
M3D187
1999 May 27

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PMSS3904 /T3 Summary of contents

Page 1

DATA SHEET dbook, halfpage PMSS3904 NPN switching transistor Product data sheet Supersedes data of 1997 Sep 03 DISCRETE SEMICONDUCTORS M3D187 1999 May 27 ...

Page 2

... NXP Semiconductors NPN switching transistor FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • General purpose switching and amplification • Telephony and professional communication equipment. DESCRIPTION NPN switching transistor in an SC-70 (SOT323) plastic package. PNP complement: PMSS3906. MARKING CODE ...

Page 3

... NXP Semiconductors NPN switching transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain FE V collector-emitter saturation voltage ...

Page 4

... NXP Semiconductors NPN switching transistor 300 handbook, full pagewidth h FE 200 100 0 − handbook, full pagewidth = 500 μ μ Ω 2.5 kΩ 3.9 kΩ Ω. Oscilloscope: input impedance Z i 1999 May 27 −1 1 Fig.2 DC gain current; typical values. ...

Page 5

... NXP Semiconductors NPN switching transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT b p max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 1999 May scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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