BFR106T/R NXP Semiconductors, BFR106T/R Datasheet - Page 2

• Manufacturer Part Number: BFR106T/R
• Description: Trans GP BJT NPN 15V 0.1A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BFR106T/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 25@50mA@9V
• Maximum Operating Frequency: 5000(Typ) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Collector Base Voltage: 20 V
• Maximum Collector Emitter Voltage: 15 V
• Maximum Emitter Base Voltage: 3 V

NXP Semiconductors
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic SOT23 envelope. It is
primarily intended for low noise,
general RF applications.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
September 1995
V
V
I
P
h
f
G
V
V
V
V
I
P
T
T
SYMBOL
C
T
C
SYMBOL
FE
stg
j
CBO
CEO
tot
o
CBO
CEO
EBO
tot
NPN 5 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
output voltage
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
PINNING
PIN
1
2
3
open emitter
open base
up to T
I
I
T
I
T
I
T
f
C
C
C
C
(pqr)
amb
amb
amb
base
emitter
collector
= 50 mA; V
= 50 mA; V
= 30 mA; V
= 50 mA; V
open emitter
open base
open collector
up to T
Code: R7p
= 25 C
= 25 C
= 25 C; d
DESCRIPTION
= 793.25 MHz
s
= 70 C; note 1
2
s
CONDITIONS
= 70 C; note 1
CE
CE
CE
CE
im
CONDITIONS
= 9 V; T
= 9 V; f = 500 MHz;
= 6 V; f = 800 MHz;
= 9 V; R
= 60 dB;
L
amb
= 75 ;
= 25 C
lfpage




25



MIN.
Top view
1





65

MIN.
Fig.1 SOT23.




80
5
11.5
350
Product specification
TYP.
20
15
3
100
500
150
175
3
MAX.
MSB003
20
15
100
500




BFR106
MAX.
2
V
V
V
mA
mW
C
C
UNIT
V
V
mA
mW
GHz
dB
mV
UNIT