BFR106T/R NXP Semiconductors, BFR106T/R Datasheet - Page 4
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BFR106T/R
Manufacturer Part Number
BFR106T/R
Description
Trans GP BJT NPN 15V 0.1A 3-Pin TO-236AB T/R
Manufacturer
NXP Semiconductors
Type
NPNr
Datasheet
1.BFR106215.pdf
(10 pages)
Specifications of BFR106T/R
Package
3TO-236AB
Supplier Package
TO-236AB
Pin Count
3
Minimum Dc Current Gain
25@50mA@9V
Maximum Operating Frequency
5000(Typ) MHz
Maximum Dc Collector Current
0.1 A
Maximum Collector Base Voltage
20 V
Maximum Collector Emitter Voltage
15 V
Maximum Emitter Base Voltage
3 V
NXP Semiconductors
September 1995
handbook, halfpage
1/2 page (Datasheet)
NPN 5 GHz wideband transistor
V
(GHz)
Fig.4
(mW)
P tot
CE
T f
= 9 V; f = 500 MHz; T
600
400
200
4
8
6
2
0
0
0
0
Transition frequency as a function of
collector current.
Fig.2 Power derating curve.
50
40
j
= 25 C.
100
80
150
I
C
T
MEA398 - 1
s
(mA)
MBB773
( C)
o
120
200
22 mm
4
handbook, halfpage
handbook, halfpage
Fig.3
I
Fig.5
G UM
h FE
V
C
(dB)
CE
= 30 mA; V
120
80
40
= 9 V; T
40
30
20
10
0
0
10
0
DC current gain as a function of collector
current.
Maximum unilateral power gain as a
function of frequency.
amb
CE
= 6 V; T
= 25 C.
10
40
amb
2
= 25 C.
10
80
3
Product specification
I
f (MHz)
C
(mA)
BFR106
MBB774
MEA399
120
10
4