BFR106T/R NXP Semiconductors, BFR106T/R Datasheet - Page 4

• Manufacturer Part Number: BFR106T/R
• Description: Trans GP BJT NPN 15V 0.1A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BFR106T/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 25@50mA@9V
• Maximum Operating Frequency: 5000(Typ) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Collector Base Voltage: 20 V
• Maximum Collector Emitter Voltage: 15 V
• Maximum Emitter Base Voltage: 3 V

NXP Semiconductors
September 1995
handbook, halfpage
1/2 page (Datasheet)
NPN 5 GHz wideband transistor
V
(GHz)
Fig.4
(mW)
P tot
CE
T f
= 9 V; f = 500 MHz; T
600
400
200
4
8
6
2
0
0
0
0
Transition frequency as a function of
collector current.
Fig.2 Power derating curve.
50
40
j
= 25 C.
100
80
150
I
C
T
MEA398 - 1
s
(mA)
MBB773
( C)
o
120
200
22 mm
4
handbook, halfpage
handbook, halfpage
Fig.3
I
Fig.5
G UM
h FE
V
C
(dB)
CE
= 30 mA; V
120
80
40
= 9 V; T
40
30
20
10
0
0
10
0
DC current gain as a function of collector
current.
Maximum unilateral power gain as a
function of frequency.
amb
CE
= 6 V; T
= 25 C.
10
40
amb
2
= 25 C.
10
80
3
Product specification
I
f (MHz)
C
(mA)
BFR106
MBB774
MEA399
120
10
4