PBSS5240Y,115 NXP Semiconductors, PBSS5240Y,115 Datasheet - Page 3

• Manufacturer Part Number: PBSS5240Y,115
• Description: TRANS PNP 40V 3A SOT363
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS5240Y,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 350mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 210 @ 1A, 2V
• Power - Max: 430mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Quad Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 2 A
• Power Dissipation: 430 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056512115; PBSS5240Y T/R; PBSS5240Y T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm
2002 Feb 28
V
V
V
I
I
I
P
T
T
T
R
SYMBOL
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
40 V low V
th j-a
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to
ambient
CEsat
PARAMETER
PARAMETER
PNP transistor
open emitter
open base
open collector
T
T
note 1
note 2
amb
amb
≤ 25 °C; note 1
≤ 25 °C; note 2
3
CONDITIONS
CONDITIONS
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
463
291
−40
−40
−5
−2
−3
−300
270
430
+150
150
+150
PBSS5240Y
MAX.
Product data sheet
UNIT
K/W
K/W
V
V
V
A
A
mA
mW
mW
°C
°C
°C
UNIT
2
2
.
.