PBSS5350X,135 NXP Semiconductors, PBSS5350X,135 Datasheet - Page 9

• Manufacturer Part Number: PBSS5350X,135
• Description: TRANS PNP 50V 3A SOT89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS5350X,135

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 390mV @ 300mA, 3A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1A, 2V
• Power - Max: 1.6W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 200
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 50 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 3 A
• Maximum Dc Collector Current: - 5 A
• Power Dissipation: 550 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055948135; PBSS5350X /T3; PBSS5350X /T3

NXP Semiconductors
2004 Nov 04
handbook, halfpage
handbook, halfpage
50 V, 3 A
PNP low V
I
(1) T
V BEsat
C
Fig.10 Base-emitter saturation voltage as a
T
(1) I
(2) I
(3) I
(4) I
Fig.12 Collector current as a function of
/I
amb
(V)
B
−1.2
−0.8
−0.6
−0.4
−0.2
−0.8
−0.6
−0.4
−0.2
(A)
= 20.
I C
−1
amb
−1
= 25 °C.
B
B
B
B
−10
0
= −3500 μA.
= −3150 μA.
= −2800 μA.
= −2450 μA.
0
= −55 °C.
−1
function of collector current; typical values.
collector-emitter voltage; typical values.
−0.4
−1
CEsat
(2) T
(5) I
(6) I
(7) I
(8) I
−10
−0.8
amb
B
B
B
B
(BISS) transistor
= −2100 μA.
= −1750 μA.
= −1400 μA.
= −1050 μA.
= 25 °C.
−10
−1.2
(1)
(2)
(3)
2
(3) T
−10
−1.6
(9) I
(10) I
amb
I C (mA)
3
(10)
V CE (V)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
MLE175
B
B
MLE168
= 100 °C.
= −700 μA.
= −350 μA.
−10
−2
4
9
handbook, halfpage
handbook, halfpage
R CEsat
I
(1) T
Fig.11 Equivalent on-resistance as a function of
T
(1) I
(2) I
(3) I
(4) I
Fig.13 Collector current as a function of
C
amb
/I
(Ω)
B
10
10
(A)
I C
10
10
= 20.
−5
−4
−3
−2
−1
B
B
B
B
10
= 25 °C.
−10
−1
−2
amb
0
1
3
2
= −140 mA.
= −126 mA.
= −112 mA.
= −98 mA.
0
−1
= 150 °C.
collector current; typical values.
collector-emitter voltage; typical values.
(7)
−0.4
−1
(6)
(2) T
(5) I
(6) I
(7) I
(8) I
(5)
−10
−0.8
amb
B
B
B
B
(2)
(4)
= −84 mA.
= −70 mA.
= −56 mA.
= −42 mA.
= 25 °C.
(3)
−10
−1.2
(1)
(3)
(2)
2
PBSS5350X
(3) T
(10)
(1)
(8)
(9)
Product data sheet
−10
−1.6
(9) I
(10) I
I C (mA)
3
amb
V CE (V)
B
B
MLE172
MLE169
= −55 °C.
= −28 mA.
= −14 mA.
−10
−2
4