PBSS4350T,215 NXP Semiconductors, PBSS4350T,215 Datasheet - Page 7

• Manufacturer Part Number: PBSS4350T,215
• Description: TRANS NPN 50V 2A SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS4350T,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 540mW
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 50V
• Transistor Type: NPN
• Frequency - Transition: 100MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V
• Vce Saturation (max) @ Ib, Ic: 370mV @ 300mA, 3A
• Dc Collector/base Gain Hfe Min: 300
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 2 A
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056604215::PBSS4350T T/R::PBSS4350T T/R

NXP Semiconductors
2004 Jan 09
handbook, halfpage
50 V; 3 A NPN low V
R CEsat
I
(1) T
(2) T
(3) T
Fig.10 Equivalent on-resistance as a function of
C
/I
(Ω)
B
10
10
10
10
= 20.
10
−1
−2
amb
amb
amb
10
1
3
2
−1
= 150 °C.
= 25 °C.
= −55 °C.
collector current; typical values.
1
10
10
(2)
CEsat
2
10
(1)
(3)
3
(BISS) transistor
I C (mA)
MLD875
10
4
7
PBSS4350T
Product data sheet