BST52,115 NXP Semiconductors, BST52,115 Datasheet - Page 6

• Manufacturer Part Number: BST52,115
• Description: TRANS NPN 80V 500MA SOT89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BST52,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1.3V @ 500µA, 500mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 2000 @ 500mA, 10V
• Power - Max: 1.3W
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 90 V
• Maximum Dc Collector Current: 1 A
• Maximum Collector Cut-off Current: 0.05 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933644270115; BST52 T/R; BST52 T/R

Philips Semiconductors
PACKAGE OUTLINE
2004 Dec 09
NPN Darlington transistors
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT89
1.6
1.4
A
0.48
0.35
b p1
b p2
0.53
0.40
w
IEC
M
b p3
1.8
1.4
0.44
0.23
1
c
b
e
p1
1
TO-243
JEDEC
4.6
4.4
D
0
b
D
e
p3
REFERENCES
2
2.6
2.4
E
b
p2
3.0
e
SC-62
scale
JEITA
6
2
3
1.5
e 1
B
L
A
E
p
4.25
3.75
H E
1.2
0.8
L p
4 mm
0.13
w
BST50; BST51; BST52
PROJECTION
EUROPEAN
c
H
E
Product specification
ISSUE DATE
99-09-13
04-08-03
SOT89