BCV 26 E6327 Infineon Technologies, BCV 26 E6327 Datasheet - Page 6

• Manufacturer Part Number: BCV 26 E6327
• Description: TRANSISTOR DARL PNP AF SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCV 26 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 360mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 40 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 4000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BCV26E6327XT; SP000010874

Transition frequency f
V
Total power dissipation P
f
T
CE
mW
MHz
10
10
10
400
300
250
200
150
100
= 5 V
5
50
10
0
3
2
1
0
BCV 26/46
0
15
30
45
10
1
60
T
75
=
90 105 120
tot
10
(I
= (T
C
2
)
mA
S
EHP00294
C
)
T
°C
S
10
150
3
6
Collector-base capacitance C
Emitter-base capacitance C
Permissible Pulse Load
P
P
P
tot max
tot
totmax
DC
pF
16
12
10
10
10
10
10
8
6
4
2
0
5
5
5
0
/P
10
3
2
1
0
BCV 26/46
totDC
-6
10
4
=
-5
10
(t
8
p
CEB
D
-4
)
=
T
t
10
p
12
BCV26, BCV46
-3
t
p
eb
10
T
16
-2
cb
2007-04-20
= (V
D =
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
= (V
t
s
p
V
EHP00292
V
EB
CB
CCB
CB
)
(V
10
22
)
EB
0
)