BCV 29 E6327 Infineon Technologies, BCV 29 E6327 Datasheet - Page 2
![TRANSISTOR DARL NPN AF SOT-89](/photos/5/32/53229/448-sot-89_sml.jpg)
BCV 29 E6327
Manufacturer Part Number
BCV 29 E6327
Description
TRANSISTOR DARL NPN AF SOT-89
Manufacturer
Infineon Technologies
Datasheet
1.BCV_29_E6327.pdf
(8 pages)
Specifications of BCV 29 E6327
Package / Case
SOT-89
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
1W
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
40 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
4000
Minimum Operating Temperature
- 65 C
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
30V
Collector-base Voltage
40V
Emitter-base Voltage
10V
Base-emitter Saturation Voltage (max)
1.5V
Collector-emitter Saturation Voltage
1V
Collector Current (dc) (max)
500mA
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-89
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
BCV29E6327XT
SP000010883
SP000010883
Thermal Resistance
Parameter
Junction - soldering point
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
1)
2
Symbol
R
thJS
Value
20
BCV29, BCV49
2007-03-29
Unit
K/W