BSP 52 E6327 Infineon Technologies, BSP 52 E6327 Datasheet - Page 7
![TRANSISTOR DARL NPN 80V SOT-223](/photos/5/51/55179/448-sot-223_sml.jpg)
BSP 52 E6327
Manufacturer Part Number
BSP 52 E6327
Description
TRANSISTOR DARL NPN 80V SOT-223
Manufacturer
Infineon Technologies
Datasheet
1.BSP_50_E6327.pdf
(8 pages)
Specifications of BSP 52 E6327
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1.8V @ 1mA, 1A
Current - Collector Cutoff (max)
10µA
Dc Current Gain (hfe) (min) @ Ic, Vce
2000 @ 500mA, 10V
Power - Max
1.5W
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
90 V
Maximum Dc Collector Current
1 A
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
1000
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSP52E6327XT
SP000011128
SP000011128
Package Outline
Foot Print
Marking Layout (Example)
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
Pin 1
0.7
A
0.25
±0.1
Pin 1
Package SOT223
M
1
A
1.2
6.5
8
3
4.6
1.1
±0.1
±0.2
2
6.8
3.5
2.3
7
4
3
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Manufacturer
0.3 MAX.
0.1 MAX.
0.25
1.75
M
B
1.6
±0.1
BSP50-BSP52
B
2007-03-30