BSP 50 H6327 Infineon Technologies, BSP 50 H6327 Datasheet - Page 2
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BSP 50 H6327
Manufacturer Part Number
BSP 50 H6327
Description
TRANS NPN DARL 45V 1A SOT223
Manufacturer
Infineon Technologies
Datasheet
1.BSP_50_H6327.pdf
(8 pages)
Specifications of BSP 50 H6327
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
1.8V @ 1mA, 1A
Current - Collector Cutoff (max)
10µA
Dc Current Gain (hfe) (min) @ Ic, Vce
2000 @ 500mA, 10V
Power - Max
1.5W
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
I
Collector-base breakdown voltage
I
I
I
Emitter-base breakdown voltage
I
Collector-emitter cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
I
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage
I
I
1
2
C
C
C
C
C
C
E
C
C
C
C
C
C
For calculation of R
Pulse test: t < 300µs; D < 2%
CE
EB
= 100 µA, I
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 100 µA, I
= 100 µA, I
= 100 µA, I
= 150 mA, V
= 500 mA, V
= 500 mA, I
= 1 A, I
= 500 mA, I
= 1 mA, I
= 4 V, I
= V
CE0max
B
B
= 1 mA
C
B
B
B
C
= 1 A
E
E
E
= 0
B
B
= 0 , BSP50
= 0 , BSP51
= 0 , BSP52
CE
CE
= 0 , BSP50
= 0 , BSP51
= 0 , BSP52
= 0
2)
, V
= 0.5 mA
= 0.5 mA
thJA
= 10 V
= 10 V
BE
please refer to Application Note Thermal Resistance
= 0
1)
2)
A
= 25°C, unless otherwise specified
2)
2
Symbol
R
Symbol
V
V
V
I
I
h
V
V
CES
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
thJS
1000
2000
min.
45
60
80
60
80
90
5
-
-
-
-
-
-
Values
Value
typ.
17
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BSP50-BSP52
max.
1.3
1.8
1.9
2.2
10
10
2007-03-30
-
-
-
-
-
-
-
-
-
Unit
K/W
Unit
V
µA
µA
-
V