PBSS9110AS,126 NXP Semiconductors, PBSS9110AS,126 Datasheet - Page 7

• Manufacturer Part Number: PBSS9110AS,126
• Description: TRANS PNP 100V 1A LOW SAT TO92
• Manufacturer: NXP Semiconductors

Specifications of PBSS9110AS,126

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 320mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 500mA, 5V
• Power - Max: 830mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057765126; PBSS9110AS AMO; PBSS9110AS AMO

NXP Semiconductors
PBSS9110AS_3
Product data sheet
Fig 7.
Fig 9.
V
R
−10
BEsat
CEsat
(V)
(Ω)
(1) T
(2) T
(3) T
10
(1) T
(2) T
(3) T
−10
10
10
−1
10
−1
−1
−10
−10
3
2
1
I
Base-emitter saturation voltage as a function
of collector current; typical values
I
Equivalent on-resistance as a function of
collector current; typical values
C
C
−1
−1
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 10
= 10
= −55 °C
= 25 °C
= 100 °C
= −55 °C
= 25 °C
= 100 °C
−1
−1
(1)
(2)
(3)
−10
−10
−10
−10
(1)
(2)
(3)
2
2
−10
−10
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3
I
3
I
C
C
(mA)
(mA)
Rev. 03 — 21 November 2009
−10
−10
4
4
Fig 8.
Fig 10. Equivalent on-resistance as a function of
R
V
−10
BEsat
CEsat
(Ω)
(V)
10
(1) I
(2) I
−10
10
10
−1
10
−1
−1
−10
−10
1
3
2
I
T
Base-emitter saturation voltage as a function
of collector current; typical values
T
collector current; typical values
C
C
C
100 V, 1 A PNP low V
−1
−1
amb
amb
/I
/I
/I
B
B
B
= 20
= 50
= 20
= 25 °C
= 25 °C
−1
−1
−10
−10
PBSS9110AS
(1)
(2)
−10
−10
2
2
CEsat
−10
−10
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
001aaa379
001aaa383
3
I
3
I
C
C
(mA)
(mA)
−10
−10
4
4
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