2N5551,116 NXP Semiconductors, 2N5551,116 Datasheet
2N5551,116
Specifications of 2N5551,116
2N5551 T/R
933215530116
Related parts for 2N5551,116
2N5551,116 Summary of contents
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1999 Apr 23 2004 Oct 28 ...
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Philips Semiconductors NPN high-voltage transistors FEATURES Low current (max. 300 mA) High voltage (max. 160 V). APPLICATIONS Switching and amplification in high voltage applications such as telephony. DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 ...
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Philips Semiconductors NPN high-voltage transistors THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th(j-a) CHARACTERISTICS unless otherwise specified. amb SYMBOL PARAMETER I collector-base cut-off current CBO 2N5550 collector-base cut-off current 2N5551 I emitter-base cut-off ...
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Philips Semiconductors NPN high-voltage transistors 160 handbook, full pagewidth h FE 120 2004 Oct 28 10 Fig.2 DC current gain; typical values. 4 Product specification 2N5550; 2N5551 MGD814 ...
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Philips Semiconductors NPN high-voltage transistors PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 0.66 0.45 mm ...
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Philips Semiconductors NPN high-voltage transistors DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or ...
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Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited ...